<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>The well known Shockley-Read-Hall (SRH) model considers emission and capture processes at defects exhibiting a single level or multiple non-coupled levels in the band gap of the semiconductor. The present paper generalizes the model to the case of two mutually coupled defect levels acting as trapping centres. If the intercenter transition is not considered, the model reduces to the case of two non-coupled levels treated by the SRH model.</p></abstract>

The well known Shockley-Read-Hall (SRH) model considers emission and capture processes at defects exhibiting a single level or multiple non-coupled levels in the band gap of the semiconductor. The present paper generalizes the model to the case of two mutually coupled defect levels acting as trapping centres. If the intercenter transition is not considered, the model reduces to the case of two non-coupled levels treated by the SRH model.

Coupled Defect Level Recombination in the P—N Junction

Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia

Technical University Ilmenau, PF 98684 Ilmenau, Germany

Journal of Electrical Engineering

{"article-title":"Coupled Defect Level Recombination in the P\u2014N Junction"}

The well known Shockley-Read-Hall (SRH) model considers emission and capture processes at defects exhibiting a single level or multiple non-coupled levels in...

Coupled Defect Level Recombination in the P—N Junction

Publicado en línea: 21 dic 2011

Páginas: 355 - 358

DOI: https://doi.org/10.2478/v10187-011-0056-5

Palabras clave
tunneling, coupled levels

This content is open access.

Coupled Defect Level Recombination in the P—N Junction

Publicado en línea: 21 dic 2011

Páginas: 355 - 358

DOI: https://doi.org/10.2478/v10187-011-0056-5

Palabras clavetunneling, coupled levels

This content is open access.

Palabras clave
tunneling, coupled levels