1. bookVolume 62 (2011): Issue 6 (November 2011)
Journal Details
License
Format
Journal
eISSN
1339-309X
ISSN
1335-3632
First Published
07 Jun 2011
Publication timeframe
6 times per year
Languages
English
access type Open Access

Coupled Defect Level Recombination in the P—N Junction

Journal Details
License
Format
Journal
eISSN
1339-309X
ISSN
1335-3632
First Published
07 Jun 2011
Publication timeframe
6 times per year
Languages
English
Coupled Defect Level Recombination in the P—N Junction

The well known Shockley-Read-Hall (SRH) model considers emission and capture processes at defects exhibiting a single level or multiple non-coupled levels in the band gap of the semiconductor. The present paper generalizes the model to the case of two mutually coupled defect levels acting as trapping centres. If the intercenter transition is not considered, the model reduces to the case of two non-coupled levels treated by the SRH model.

Keywords

ISE Integrated System Engineering, Release 7.0, Volume 4a (1995), p. 12 215.Search in Google Scholar

SCHENK, A.—KRUMBEIN, U.: Coupled Defect Recombination: Theory and Application to Anomalous Diode Characteristics, J. Appl. Phys. 78 (1995), 3185.10.1063/1.360007Search in Google Scholar

RACKO, J.: Unpublished results.Search in Google Scholar

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