Login
Register
Reset Password
Publish & Distribute
Publishing Solutions
Distribution Solutions
Subjects
Publications
Journals
Books
Proceedings
Publishers
Blog
Contact
Search
Cart
EUR
USD
GBP
English
English
Deutsch
Polski
Español
Français
Italiano
Home
Journals
Journal of Electrical Engineering
Volume 66 (2015): Issue 4 (July 2015)
Open Access
Low–Frequency Noise Measurements Used For Quality Assessment Of GaSb Based Laser Diodes Prepared By Molecular Beam Epitaxy
Zdeněk Chobola
Zdeněk Chobola
,
Miroslav Luňák
Miroslav Luňák
,
Jiří Vaněk
Jiří Vaněk
,
Eduard Hulicius
Eduard Hulicius
and
Ivo Kusák
Ivo Kusák
| Sep 19, 2015
Journal of Electrical Engineering
Volume 66 (2015): Issue 4 (July 2015)
About this article
Previous Article
Next Article
Abstract
References
Authors
Articles in this Issue
Preview
PDF
Cite
Share
Published Online:
Sep 19, 2015
Page range:
226 - 230
Received:
Nov 13, 2014
DOI:
https://doi.org/10.2478/jee-2015-0036
Keywords
molecular beam epitaxy
,
excess nois
,
lasers diodes
,
vertical cavity surface emitting
,
gasb substrate
© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.