- Journal Details
- Format
- Journal
- eISSN
- 1407-6179
- First Published
- 20 Mar 2000
- Publication timeframe
- 4 times per year
- Languages
- English
The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed. The research installation for investigating the IGBT commutation processes during the pulse anode-cathode oxidation has been constructed. The experiments have been performed with its help in order to estimate the possibility of using half-bridge IGBT-modules with different drivers. The research results of the commutation processes investigation for different IGBT half- bridge modules are presented.
Keywords
- micro-arc oxidation
- insulated gate bipolar transistors
- high voltage
- commutation process
- ballast resistance
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