1. bookVolume 16 (2015): Issue 3 (September 2015)
Journal Details
License
Format
Journal
eISSN
1407-6179
First Published
20 Mar 2000
Publication timeframe
4 times per year
Languages
English
access type Open Access

Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation

Published Online: 22 Jun 2015
Page range: 217 - 223
Journal Details
License
Format
Journal
eISSN
1407-6179
First Published
20 Mar 2000
Publication timeframe
4 times per year
Languages
English
Abstract

The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed. The research installation for investigating the IGBT commutation processes during the pulse anode-cathode oxidation has been constructed. The experiments have been performed with its help in order to estimate the possibility of using half-bridge IGBT-modules with different drivers. The research results of the commutation processes investigation for different IGBT half- bridge modules are presented.

Keywords

1. Gordienko, P., Dostovalov, I., Zhevtun I., Shabalin, I. (2013) Micro-arc oxidation for pulse polarization in galvanic-dynamical mode. Electronic Processing of Materials, 49(4), p.35–42 (in Russian).10.3103/S1068375513040066Search in Google Scholar

2. Martinenko, V., Muskatjev, V., Chibirkin, V. (2004) New constructions of IGBT modules for high-voltage applications. HiT: Design in Electronics, № 4. p.1–4 (in Russian).Search in Google Scholar

3. Nikitin, A. (2010) Modern high-voltage drivers for IGBT and MOSFET transistors. News of Electronics, № 6. p. 32 – 36 (in Russian).Search in Google Scholar

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5. Suminov, I., Epelfeild, A., Ljudin, V., Krit, B., Borisov, A. (2005) Micro-arc oxidation (theory, technology, equipment), Moscow, ECOMET, 368 pp. (in Russian).Search in Google Scholar

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